MPSW01A-AP datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Micro Commercial Co stock available on our website
SOT-23
MPSW01A-AP Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Operating Temperature
-55°C~150°C TJ
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power - Max
625MW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 100mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max)
40V
Current - Collector (Ic) (Max)
1A
Frequency - Transition
50MHz
RoHS Status
ROHS3 Compliant
MPSW01A-AP Product Details
MPSW01A-AP Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 60 @ 100mA 1V DC current gain.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 100mA, 1A.This device displays a 40V maximum voltage - Collector Emitter Breakdown.
MPSW01A-AP Features
the DC current gain for this device is 60 @ 100mA 1V the vce saturation(Max) is 500mV @ 100mA, 1A
MPSW01A-AP Applications
There are a lot of Micro Commercial Co MPSW01A-AP applications of single BJT transistors.