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MPSW01A-AP

MPSW01A-AP

MPSW01A-AP

Micro Commercial Co

MPSW01A-AP datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Micro Commercial Co stock available on our website

SOT-23

MPSW01A-AP Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Operating Temperature -55°C~150°C TJ
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 625MW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max) 40V
Current - Collector (Ic) (Max) 1A
Frequency - Transition 50MHz
RoHS Status ROHS3 Compliant
MPSW01A-AP Product Details

MPSW01A-AP Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 60 @ 100mA 1V DC current gain.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 100mA, 1A.This device displays a 40V maximum voltage - Collector Emitter Breakdown.

MPSW01A-AP Features


the DC current gain for this device is 60 @ 100mA 1V
the vce saturation(Max) is 500mV @ 100mA, 1A

MPSW01A-AP Applications


There are a lot of Micro Commercial Co MPSW01A-AP applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver

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