KSD288WTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSD288WTU Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
KSD288
Power - Max
25W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 500mA 5V
Current - Collector Cutoff (Max)
50μA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max)
55V
Current - Collector (Ic) (Max)
3A
KSD288WTU Product Details
KSD288WTU Overview
DC current gain in this device equals 40 @ 500mA 5V, which is the ratio of the base current to the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 100mA, 1A.Supplier package TO-220-3 contains the product.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
KSD288WTU Features
the DC current gain for this device is 40 @ 500mA 5V the vce saturation(Max) is 1V @ 100mA, 1A the supplier device package of TO-220-3
KSD288WTU Applications
There are a lot of ON Semiconductor KSD288WTU applications of single BJT transistors.