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KSA916YBU

KSA916YBU

KSA916YBU

ON Semiconductor

KSA916YBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSA916YBU Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body
Supplier Device Package TO-92-3
Operating Temperature 150°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number KSA916
Power - Max 900mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 120V
Current - Collector (Ic) (Max) 800mA
Frequency - Transition 120MHz
KSA916YBU Product Details

KSA916YBU Overview


This device has a DC current gain of 120 @ 100mA 5V, which is the ratio between the base current and the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 50mA, 500mA.Product package TO-92-3 comes from the supplier.This device displays a 120V maximum voltage - Collector Emitter Breakdown.

KSA916YBU Features


the DC current gain for this device is 120 @ 100mA 5V
the vce saturation(Max) is 1V @ 50mA, 500mA
the supplier device package of TO-92-3

KSA916YBU Applications


There are a lot of ON Semiconductor KSA916YBU applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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