KSA916YBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSA916YBU Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Long Body
Supplier Device Package
TO-92-3
Operating Temperature
150°C TJ
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
KSA916
Power - Max
900mW
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 100mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
120V
Current - Collector (Ic) (Max)
800mA
Frequency - Transition
120MHz
KSA916YBU Product Details
KSA916YBU Overview
This device has a DC current gain of 120 @ 100mA 5V, which is the ratio between the base current and the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 50mA, 500mA.Product package TO-92-3 comes from the supplier.This device displays a 120V maximum voltage - Collector Emitter Breakdown.
KSA916YBU Features
the DC current gain for this device is 120 @ 100mA 5V the vce saturation(Max) is 1V @ 50mA, 500mA the supplier device package of TO-92-3
KSA916YBU Applications
There are a lot of ON Semiconductor KSA916YBU applications of single BJT transistors.