VN0606L-G-P003

new-10%

Manufacturer part number:VN0606L-G-P003

Manufacturer:Microchip Technology

Description:MOSFET N-CH Enhancmnt Mode MOSFET

Case Package:SOT-23

Datasheet:VN0606L-G-P003 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins	3
Weight	453.59237mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	1W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3 Ω @ 1A, 10V
Vgs(th) (Max) @ Id	2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	50pF @ 25V
Current - Continuous Drain (Id) @ 25°C	330mA Tj
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Continuous Drain Current (ID)	330mA
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	3Ohm
Drain to Source Breakdown Voltage	60V
Feedback Cap-Max (Crss)	5 pF
RoHS Status	ROHS3 Compliant