STW45NM60 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
SOT-23
STW45NM60 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Weight
9.071847g
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Series
MDmesh™
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
110mOhm
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
600V
Technology
MOSFET (Metal Oxide)
Current Rating
45A
Base Part Number
STW45N
Pin Count
3
Number of Elements
1
Power Dissipation-Max
417W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
417W
Turn On Delay Time
30 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
110m Ω @ 22.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3800pF @ 25V
Current - Continuous Drain (Id) @ 25°C
45A Tc
Gate Charge (Qg) (Max) @ Vgs
134nC @ 10V
Rise Time
20ns
Drain to Source Voltage (Vdss)
650V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
23 ns
Continuous Drain Current (ID)
45A
Threshold Voltage
4V
JEDEC-95 Code
TO-247AC
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
600V
Avalanche Energy Rating (Eas)
850 mJ
Height
20.15mm
Length
15.75mm
Width
5.15mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:574 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$13.71000
$13.71
30
$11.68133
$350.4399
120
$10.81500
$1297.8
510
$9.37125
$4779.3375
STW45NM60 Product Details
STW45NM60 Description
STW45NM60 is an N-Channel power MOSFET in TO-247-3 package. The MDmesh? is a new revolutionary Power MOSFET technology that associates the multiple drain process with the Company’s PowerMESH? horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competitor’s products. STW45NM60 Features
High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance STW45NM60 Applications
Automotive Advanced driver assistance systems (ADAS)Body electronics & lighting Hybrid, electric & power train systems Infotainment & cluster Communications equipment Broadband fixed line access Datacom module Wired networking Wireless infrastructure Industrial Aerospace & defense Appliances Building automation Electronic point of sale (EPOS)Factory automation & control Grid infrastructure Industrial transport (non-car & non-light truck)Lighting Medical Motor drives Power delivery Pro audio, video & signage Test & measurement
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