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TP2540N3-G-P002

TP2540N3-G-P002

TP2540N3-G-P002

Microchip Technology

Trans MOSFET P-CH 400V 0.086A 3-Pin TO-92 T/R

SOT-23

TP2540N3-G-P002 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 5 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Weight 453.59237mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 740mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 740mW
Turn On Delay Time 10 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 25 Ω @ 100mA, 10V
Vgs(th) (Max) @ Id 2.4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 125pF @ 25V
Current - Continuous Drain (Id) @ 25°C 86mA Tj
Rise Time 10ns
Drain to Source Voltage (Vdss) 400V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 86mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.086A
DS Breakdown Voltage-Min 400V
Feedback Cap-Max (Crss) 25 pF
RoHS Status ROHS3 Compliant
Pricing & Ordering
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