VN3205N3-G-P002

new-10%

Manufacturer part number:VN3205N3-G-P002

Manufacturer:Microchip Technology

Description:MOSFET,N-CHANNEL ENHANCEMENT-MODE,50V,0.3 Ohm3 TO-92RVT/R

Case Package:SOT-23

Datasheet:VN3205N3-G-P002 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins	3
Weight	453.59237mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	HIGH INPUT IMPEDANCE
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1W
Turn On Delay Time	10 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	300m Ω @ 3A, 10V
Vgs(th) (Max) @ Id	2.4V @ 10mA
Input Capacitance (Ciss) (Max) @ Vds	300pF @ 25V
Current - Continuous Drain (Id) @ 25°C	1.2A Tj
Rise Time	15ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	25 ns
Turn-Off Delay Time	25 ns
Continuous Drain Current (ID)	1.2A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	50V
Height	5.33mm
Length	5.21mm
Width	4.19mm
RoHS Status	ROHS3 Compliant