EPC2012C

new-10%

Manufacturer part number:EPC2012C

Manufacturer:EPC

Description:GANFET TRANS 200V 5A BUMPED DIE

Case Package:SOT-23

Datasheet:EPC2012C Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	Die
Supplier Device Package	Die Outline (4-Solder Bar)
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
Series	eGaN®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-40°C
Technology	GaNFET (Gallium Nitride)
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	100mOhm @ 3A, 5V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	140pF @ 100V
Current - Continuous Drain (Id) @ 25°C	5A Ta
Gate Charge (Qg) (Max) @ Vgs	1.3nC @ 5V
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	5V
Vgs (Max)	+6V, -4V
Continuous Drain Current (ID)	5A
Input Capacitance	140pF
Rds On Max	100 mΩ
RoHS Status	ROHS3 Compliant