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IPW60R070P6XKSA1

IPW60R070P6XKSA1

IPW60R070P6XKSA1

Infineon Technologies

MOSFET (Metal Oxide) N-Channel Tube 70m Ω @ 20.6A, 10V ±20V 4750pF @ 100V 100nC @ 10V TO-247-3

SOT-23

IPW60R070P6XKSA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series CoolMOS™ P6
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 391W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 23 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 70m Ω @ 20.6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.72mA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 4750pF @ 100V
Current - Continuous Drain (Id) @ 25°C 53.5A Tc
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Rise Time 15ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 4 ns
Turn-Off Delay Time 64 ns
Continuous Drain Current (ID) 53.5A
Gate to Source Voltage (Vgs) 30V
Max Dual Supply Voltage 600V
Drain-source On Resistance-Max 0.07Ohm
Pulsed Drain Current-Max (IDM) 156A
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $8.13000 $8.13
10 $7.36800 $73.68
240 $6.15213 $1476.5112
720 $5.23967 $3772.5624
1,200 $4.63138 $4.63138
IPW60R070P6XKSA1 Product Details

IPW60R070P6XKSA1 Overview


A device's maximal input capacitance is 4750pF @ 100V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 53.5A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 64 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 156A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 23 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.By using 600V, it can supply the maximum voltage from two sources.This device reduces its overall power consumption by using drive voltage (10V).

IPW60R070P6XKSA1 Features


a continuous drain current (ID) of 53.5A
the turn-off delay time is 64 ns
based on its rated peak drain current 156A.


IPW60R070P6XKSA1 Applications


There are a lot of Infineon Technologies
IPW60R070P6XKSA1 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples

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