CSD17579Q3A

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CSD17579Q3A

Manufacturer part number:CSD17579Q3A

Manufacturer:Texas Instruments

Description:CSD17579Q3A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available on our website

Case Package:SOT-23

Datasheet:CSD17579Q3A Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Contact Plating	Copper, Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	NexFET™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	CSD17579
Number of Elements	1
Power Dissipation-Max	3.2W Ta 29W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	2 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	10.2m Ω @ 8A, 10V
Vgs(th) (Max) @ Id	1.9V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	998pF @ 15V
Current - Continuous Drain (Id) @ 25°C	20A Ta
Gate Charge (Qg) (Max) @ Vgs	15nC @ 10V
Rise Time	5ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	1 ns
Turn-Off Delay Time	11 ns
Continuous Drain Current (ID)	20A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	11A
Drain-source On Resistance-Max	0.0142Ohm
Pulsed Drain Current-Max (IDM)	106A
DS Breakdown Voltage-Min	30V
Avalanche Energy Rating (Eas)	14 mJ
Feedback Cap-Max (Crss)	49 pF
Length	3.3mm
Width	3.3mm
Thickness	800μm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free