2N2218 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 150mA 10V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.6V @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Product comes in the supplier's device package TO-39 (TO-205AD).The device has a 30V maximal voltage - Collector Emitter Breakdown.Single BJT transistor is possible for the collector current to fall as low as 800mA volts at Single BJT transistors maximum.
2N2218 Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the supplier device package of TO-39 (TO-205AD)
2N2218 Applications
There are a lot of Microsemi Corporation 2N2218 applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
