APT13005DTF-G1 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 8 @ 2A 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 900mV, which allows maximum flexibilSingle BJT transistory in design.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 900mV @ 1A, 4A.With the emitter base voltage set at 9V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 4MHz.In extreme cases, the collector current can be as low as 4A volts.
APT13005DTF-G1 Features
the DC current gain for this device is 8 @ 2A 5V
a collector emitter saturation voltage of 900mV
the vce saturation(Max) is 900mV @ 1A, 4A
the emitter base voltage is kept at 9V
a transition frequency of 4MHz
APT13005DTF-G1 Applications
There are a lot of Diodes Incorporated APT13005DTF-G1 applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
