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2N6055

2N6055

2N6055

Central Semiconductor

1 Elements 2 Terminations TO-3

SOT-23

2N6055 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Through Hole
Package / Case TO-3
Published 2005
JESD-609 Code e0
Pbfree Code no
Part StatusActive
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Operating Temperature150°C
Min Operating Temperature -65°C
HTS Code8541.29.00.95
Subcategory Other Transistors
Terminal Position BOTTOM
Terminal FormPIN/PEG
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count2
JESD-30 Code O-MBFM-P2
Qualification StatusNot Qualified
Number of Elements 1
Polarity NPN
Power Dissipation-Max 100W
Element ConfigurationSingle
Power Dissipation100W
Case Connection COLLECTOR
Transistor Application SWITCHING
Collector Emitter Voltage (VCEO) 3V
Max Collector Current 8A
Collector Emitter Breakdown Voltage60V
Transition Frequency 4MHz
Frequency - Transition 4MHz
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
DC Current Gain-Min (hFE) 750
Continuous Collector Current 450mA
RoHS StatusRoHS Compliant
In-Stock:2148 items

2N6055 Product Details

2N6055 Overview


For high efficiency, the continuous collector voltage must be kept at 450mA.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 4MHz in the part.When collector current reaches its maximum, it can reach 8A volts.

2N6055 Features


the emitter base voltage is kept at 5V
a transition frequency of 4MHz


2N6055 Applications


There are a lot of Central Semiconductor
2N6055 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting

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