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2N6055

2N6055

2N6055

Central Semiconductor

1 Elements 2 Terminations TO-3

SOT-23

2N6055 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Through Hole
Package / Case TO-3
Published 2005
JESD-609 Code e0
Pbfree Code no
Part Status Active
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
HTS Code 8541.29.00.95
Subcategory Other Transistors
Terminal Position BOTTOM
Terminal Form PIN/PEG
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 2
JESD-30 Code O-MBFM-P2
Qualification Status Not Qualified
Number of Elements 1
Polarity NPN
Power Dissipation-Max 100W
Element Configuration Single
Power Dissipation 100W
Case Connection COLLECTOR
Transistor Application SWITCHING
Collector Emitter Voltage (VCEO) 3V
Max Collector Current 8A
Collector Emitter Breakdown Voltage 60V
Transition Frequency 4MHz
Frequency - Transition 4MHz
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
DC Current Gain-Min (hFE) 750
Continuous Collector Current 450mA
RoHS Status RoHS Compliant
2N6055 Product Details

2N6055 Overview


For high efficiency, the continuous collector voltage must be kept at 450mA.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 4MHz in the part.When collector current reaches its maximum, it can reach 8A volts.

2N6055 Features


the emitter base voltage is kept at 5V
a transition frequency of 4MHz


2N6055 Applications


There are a lot of Central Semiconductor
2N6055 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting

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