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JANTX2N3634

JANTX2N3634

JANTX2N3634

Microsemi Corporation

JANTX2N3634 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JANTX2N3634 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 23 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2002
Series Military, MIL-PRF-19500/357
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Other Transistors
Max Power Dissipation 1W
Terminal Position BOTTOM
Terminal Form WIRE
Pin Count 2
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE
Power Dissipation 1W
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 140V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 50mA 10V
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 50mA
Transition Frequency 150MHz
Collector Base Voltage (VCBO) 140V
Emitter Base Voltage (VEBO) 5V
Turn Off Time-Max (toff) 650ns
Turn On Time-Max (ton) 200ns
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $12.30000 $12.3
500 $12.177 $6088.5
1000 $12.054 $12054
1500 $11.931 $17896.5
2000 $11.808 $23616
2500 $11.685 $29212.5
JANTX2N3634 Product Details

JANTX2N3634 Overview


In this device, the DC current gain is 50 @ 50mA 10V, which is the ratio between the base current and the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.In this part, there is a transition frequency of 150MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.

JANTX2N3634 Features


the DC current gain for this device is 50 @ 50mA 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz

JANTX2N3634 Applications


There are a lot of Microsemi Corporation JANTX2N3634 applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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