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2N6308

  • 2N6308
  • 2N6308

2N6308

2N6308

Microsemi Corporation

2N6308 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

2N6308 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Through Hole
Package / Case TO-3
Number of Pins 3
Packaging Bulk
Published 2002
Part Status Active
Max Operating Temperature 200°C
Min Operating Temperature -65°C
Max Power Dissipation 125W
Number of Elements 1
Polarity NPN
Power Dissipation 125W
Collector Emitter Voltage (VCEO) 350V
Max Collector Current 8A
Collector Base Voltage (VCBO) 700V
Emitter Base Voltage (VEBO) 8V
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
100 $47.49240 $4749.24
2N6308 Product Details

2N6308 Overview


The emitter base voltage can be kept at 8V for high efficiency.The maximum collector current is 8A volts.

2N6308 Features


the emitter base voltage is kept at 8V

2N6308 Applications


There are a lot of Microsemi Corporation 2N6308 applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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