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2N6350

2N6350

2N6350

Microsemi Corporation

2N6350 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

2N6350 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Contact PlatingLead, Tin
Mount Through Hole
Package / Case TO-33
Number of Pins 4
PackagingBulk
JESD-609 Code e0
Pbfree Code no
Part StatusActive
Number of Terminations 4
Terminal Finish TIN LEAD
Max Operating Temperature200°C
Min Operating Temperature -65°C
Terminal Position BOTTOM
Terminal FormWIRE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count4
Qualification StatusNot Qualified
Number of Elements 1
Polarity NPN
Element ConfigurationSingle
Collector Emitter Voltage (VCEO) 80V
Collector Emitter Saturation Voltage1.5V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 12V
Collector Current-Max (IC) 5A
DC Current Gain-Min (hFE) 400
Turn On Time-Max (ton) 500ns
RoHS StatusNon-RoHS Compliant
Lead Free Contains Lead
In-Stock:280 items

Pricing & Ordering

QuantityUnit PriceExt. Price
100$29.69610$2969.61

2N6350 Product Details

2N6350 Overview


This design offers maximum flexibility with a collector emitter saturation voltage of 1.5V.Keeping the emitter base voltage at 12V can result in a high level of efficiency.

2N6350 Features


a collector emitter saturation voltage of 1.5V
the emitter base voltage is kept at 12V

2N6350 Applications


There are a lot of Microsemi Corporation 2N6350 applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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