2N6350 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
2N6350 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Contact Plating
Lead, Tin
Mount
Through Hole
Package / Case
TO-33
Number of Pins
4
Packaging
Bulk
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Number of Terminations
4
Terminal Finish
TIN LEAD
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Terminal Position
BOTTOM
Terminal Form
WIRE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
4
Qualification Status
Not Qualified
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Collector Emitter Voltage (VCEO)
80V
Collector Emitter Saturation Voltage
1.5V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
12V
Collector Current-Max (IC)
5A
DC Current Gain-Min (hFE)
400
Turn On Time-Max (ton)
500ns
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
100
$29.69610
$2969.61
2N6350 Product Details
2N6350 Overview
This design offers maximum flexibility with a collector emitter saturation voltage of 1.5V.Keeping the emitter base voltage at 12V can result in a high level of efficiency.
2N6350 Features
a collector emitter saturation voltage of 1.5V the emitter base voltage is kept at 12V
2N6350 Applications
There are a lot of Microsemi Corporation 2N6350 applications of single BJT transistors.