MJD44H11T4G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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MJD44H11T4G Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 11 hours ago)
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount
YES
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
80V
Max Power Dissipation
1.75W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
8A
Frequency
85MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
MJD44H11
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.75W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Halogen Free
Halogen Free
Gain Bandwidth Product
85MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
8A
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 4A 1V
Current - Collector Cutoff (Max)
1μA
Vce Saturation (Max) @ Ib, Ic
1V @ 400mA, 8A
Collector Emitter Breakdown Voltage
80V
Transition Frequency
85MHz
Collector Emitter Saturation Voltage
1V
Max Breakdown Voltage
80V
Collector Base Voltage (VCBO)
5V
Emitter Base Voltage (VEBO)
5V
hFE Min
60
Height
2.38mm
Length
6.73mm
Width
6.22mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.565200
$0.5652
10
$0.533208
$5.33208
100
$0.503026
$50.3026
500
$0.474553
$237.2765
1000
$0.447691
$447.691
MJD44H11T4G Product Details
MJD44H11T4G Overview
This device has a DC current gain of 40 @ 4A 1V, which is the ratio between the collector current and the base current.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.A VCE saturation (Max) of 1V @ 400mA, 8A means Ic has reached its maximum value(saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 8A.85MHz is present in the transition frequency.There is a breakdown input voltage of 80V volts that it can take.During maximum operation, collector current can be as low as 8A volts.
MJD44H11T4G Features
the DC current gain for this device is 40 @ 4A 1V a collector emitter saturation voltage of 1V the vce saturation(Max) is 1V @ 400mA, 8A the emitter base voltage is kept at 5V the current rating of this device is 8A a transition frequency of 85MHz
MJD44H11T4G Applications
There are a lot of ON Semiconductor MJD44H11T4G applications of single BJT transistors.