MJD44H11T4G Overview

This device has a DC current gain of 40 @ 4A 1V, which is the ratio between the collector current and the base current.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.A VCE saturation (Max) of 1V @ 400mA, 8A means Ic has reached its maximum value(saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 8A.85MHz is present in the transition frequency.There is a breakdown input voltage of 80V volts that it can take.During maximum operation, collector current can be as low as 8A volts.

MJD44H11T4G Features

the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
a transition frequency of 85MHz

MJD44H11T4G Applications

There are a lot of ON Semiconductor MJD44H11T4G applications of single BJT transistors.

• Muting
• Driver
• Interface
• Inverter