2SD1620-TD-E Overview
This device has a DC current gain of 140 @ 3A 2V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 400mV, giving you a wide variety of design options.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.An emitter's base voltage can be kept at 6V to gain high efficiency.There is a transition frequency of 200MHz in the part.As a result, it can handle voltages as low as 10V volts.A maximum collector current of 3A volts is possible.
2SD1620-TD-E Features
the DC current gain for this device is 140 @ 3A 2V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 60mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 200MHz
2SD1620-TD-E Applications
There are a lot of ON Semiconductor 2SD1620-TD-E applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
