2SD1620-TD-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2SD1620-TD-E Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Mounting Type
Surface Mount
Package / Case
TO-243AA
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2010
JESD-609 Code
e6
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Bismuth (Sn/Bi)
Max Power Dissipation
1.3W
Terminal Form
FLAT
Reach Compliance Code
not_compliant
Pin Count
3
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Power - Max
500mW
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
10V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
140 @ 3A 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 60mA, 3A
Collector Emitter Breakdown Voltage
10V
Max Frequency
1MHz
Transition Frequency
200MHz
Collector Emitter Saturation Voltage
400mV
Max Breakdown Voltage
10V
Frequency - Transition
200MHz
Collector Base Voltage (VCBO)
30V
Emitter Base Voltage (VEBO)
6V
Height
1.5mm
Length
4.5mm
Width
2.5mm
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.160540
$0.16054
10
$0.151453
$1.51453
100
$0.142880
$14.288
500
$0.134792
$67.396
1000
$0.127163
$127.163
2SD1620-TD-E Product Details
2SD1620-TD-E Overview
This device has a DC current gain of 140 @ 3A 2V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 400mV, giving you a wide variety of design options.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.An emitter's base voltage can be kept at 6V to gain high efficiency.There is a transition frequency of 200MHz in the part.As a result, it can handle voltages as low as 10V volts.A maximum collector current of 3A volts is possible.
2SD1620-TD-E Features
the DC current gain for this device is 140 @ 3A 2V a collector emitter saturation voltage of 400mV the vce saturation(Max) is 400mV @ 60mA, 3A the emitter base voltage is kept at 6V a transition frequency of 200MHz
2SD1620-TD-E Applications
There are a lot of ON Semiconductor 2SD1620-TD-E applications of single BJT transistors.