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2SD1620-TD-E

2SD1620-TD-E

2SD1620-TD-E

ON Semiconductor

2SD1620-TD-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2SD1620-TD-E Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mounting Type Surface Mount
Package / Case TO-243AA
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2010
JESD-609 Code e6
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Bismuth (Sn/Bi)
Max Power Dissipation 1.3W
Terminal Form FLAT
Reach Compliance Code not_compliant
Pin Count 3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Power - Max 500mW
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 10V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 3A 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 60mA, 3A
Collector Emitter Breakdown Voltage 10V
Max Frequency 1MHz
Transition Frequency 200MHz
Collector Emitter Saturation Voltage 400mV
Max Breakdown Voltage 10V
Frequency - Transition 200MHz
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 6V
Height 1.5mm
Length 4.5mm
Width 2.5mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.160540 $0.16054
10 $0.151453 $1.51453
100 $0.142880 $14.288
500 $0.134792 $67.396
1000 $0.127163 $127.163
2SD1620-TD-E Product Details

2SD1620-TD-E Overview


This device has a DC current gain of 140 @ 3A 2V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 400mV, giving you a wide variety of design options.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.An emitter's base voltage can be kept at 6V to gain high efficiency.There is a transition frequency of 200MHz in the part.As a result, it can handle voltages as low as 10V volts.A maximum collector current of 3A volts is possible.

2SD1620-TD-E Features


the DC current gain for this device is 140 @ 3A 2V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 60mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 200MHz

2SD1620-TD-E Applications


There are a lot of ON Semiconductor 2SD1620-TD-E applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver

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