2N6796

new-10%

Manufacturer part number:2N6796

Manufacturer:Microsemi Corporation

Description:MOSFET N-CH 100V TO-205AF TO-39

Case Package:SOT-23

Datasheet:2N6796 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-205AF Metal Can
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Published	1997
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
HTS Code	8541.21.00.95
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Terminal Form	WIRE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	2
JESD-30 Code	O-MBCY-W3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	800mW Ta 25W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	180m Ω @ 5A, 10V
Vgs(th) (Max) @ Id	4V @ 250mA
Current - Continuous Drain (Id) @ 25°C	8A Tc
Gate Charge (Qg) (Max) @ Vgs	6.34nC @ 10V
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	8A
Drain Current-Max (Abs) (ID)	8A
Drain-source On Resistance-Max	0.195Ohm
DS Breakdown Voltage-Min	100V
RoHS Status	Non-RoHS Compliant