APT1003RKLLG

new-10%

Manufacturer part number:APT1003RKLLG

Manufacturer:Microsemi Corporation

Description:MOSFET N-CH 1000V 4A TO-220

Case Package:SOT-23

Datasheet:APT1003RKLLG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	IN PRODUCTION (Last Updated: 3 weeks ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2015
Series	POWER MOS 7®
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	TIN SILVER COPPER
Voltage - Rated DC	1kV
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Current Rating	4A
Pin Count	3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	139W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	139W
Case Connection	DRAIN
Turn On Delay Time	8 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3 Ω @ 2A, 10V
Vgs(th) (Max) @ Id	5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	694pF @ 25V
Current - Continuous Drain (Id) @ 25°C	4A Tc
Gate Charge (Qg) (Max) @ Vgs	34nC @ 10V
Rise Time	4ns
Drain to Source Voltage (Vdss)	1000V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	25 ns
Continuous Drain Current (ID)	4A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	4A
Drain-source On Resistance-Max	3Ohm
Avalanche Energy Rating (Eas)	425 mJ
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free