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BSS138

BSS138

BSS138

ON Semiconductor

BSS138 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

BSS138 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Supplier Device Package SOT-23-3
Weight 30mg
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2002
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Resistance 6Ohm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 50V
Technology MOSFET (Metal Oxide)
Current Rating 220mA
Base Part Number BSS138
Number of Elements 1
Power Dissipation-Max 360mW Ta
Element Configuration Single
Power Dissipation 360mW
Turn On Delay Time 2.5 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id 1.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 27pF @ 25V
Current - Continuous Drain (Id) @ 25°C 220mA Ta
Gate Charge (Qg) (Max) @ Vgs 2.4nC @ 10V
Rise Time 9ns
Drain to Source Voltage (Vdss) 50V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 220mA
Threshold Voltage 1.3V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 50V
Dual Supply Voltage 50V
Input Capacitance 27pF
Drain to Source Resistance 3.5Ohm
Rds On Max 3.5 Ω
Nominal Vgs 1.3 V
Height 930μm
Length 2.92mm
Width 1.3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.05554 $0.16662
6,000 $0.04855 $0.2913
15,000 $0.04155 $0.62325
30,000 $0.03922 $1.1766
75,000 $0.03689 $2.76675
150,000 $0.03222 $4.833
BSS138 Product Details
BSS138 Description
:
The BSS138 is a SOT-23 packaging N channel logic level enhancement mode field effect transistor. This product is designed to provide durable, dependable, and rapid switching performance while minimizing on-state resistance. The mosfet has an extremely low threshold voltage of 0.5V, making it suitable for use in low voltage circuits and level shifting applications. In addition, the Mosfet has a low on-state resistance and low input capacitance, making it useful in switching circuits. The mosfet is frequently utilized in portable applications such as low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications due to its compact nature.

BSS138 Features

Logic Level N-Channel MOSFET with low on-state resistance
Continuous Drain Current (ID) is 200mA
Drain Source Voltage (VDS) is 50V
On-state Resistance is 3.5?
Minimum Gate threshold voltage (VGS-th) is 0.5V
Maximum Gate threshold voltage (VGS-th) is 1.5V
Turn ON and Turn off time is 20ns each
Available in SOT23 SMD package

BSS138 Applications

Low current and Low Voltage switching applications
Logic Level Shifters
DC-DC converts
eMobility applications
Application where low on-state resistance is required.
Power management applications

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