APT24M80S

new-10%

Manufacturer part number:APT24M80S

Manufacturer:Microsemi Corporation

Description:MOSFET N-CH 800V 25A D3PAK

Case Package:SOT-23

Datasheet:APT24M80S Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	30 Weeks
Lifecycle Status	IN PRODUCTION (Last Updated: 3 weeks ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Published	1997
Series	POWER MOS 8™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	PURE MATTE TIN
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	245
[email protected] Reflow Temperature-Max (s)	30
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	625W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	390m Ω @ 12A, 10V
Vgs(th) (Max) @ Id	5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	4595pF @ 25V
Current - Continuous Drain (Id) @ 25°C	25A Tc
Gate Charge (Qg) (Max) @ Vgs	150nC @ 10V
Drain to Source Voltage (Vdss)	800V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Continuous Drain Current (ID)	25A
Drain-source On Resistance-Max	0.39Ohm
Pulsed Drain Current-Max (IDM)	85A
DS Breakdown Voltage-Min	800V
Avalanche Energy Rating (Eas)	975 mJ
RoHS Status	RoHS Compliant