SIGC61T60NCX1SA1 Description

The SIGC61T60NCX1SA1 is an IGBT Chip in NPT-technology. The Insulated Gate Bipolar Transistor, or IGBT, is a BJT and MOSFET hybrid. The name also implies the union between them. The input portion of a MOSFET with an extremely high input impedance is referred to as an "insulated gate." Instead of drawing input current, it relies on the voltage at its gate terminal to function. Bipolar refers to the output region of a BJT, where both classes of charge carriers are responsible for the current flow. Using low voltage signals, it is able to manage very high currents and voltages. IGBTs are voltage-controlled devices thanks to this hybrid configuration.

SIGC61T60NCX1SA1 Features

• Short circuit prove

• Positive temperature coefficient

• Easy paralleling

• 600V NPT technology

• 100μm chip

SIGC61T60NCX1SA1 Applications

• Drives

• It is used in SMPS (Switched Mode Power Supply) to supply power to sensitive medical equipment and computers.

• It is used in UPS (Uninterruptible Power Supply) system.

• It is used in AC and DC motor drives offering speed control.

• It is used in chopper and inverters.

• It is used in solar inverters.