IRGPS60B120KDP

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Manufacturer part number:IRGPS60B120KDP

Manufacturer:Infineon Technologies

Description:IRGPS60B120KDP datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRGPS60B120KDP Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-274AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	1.2kV
Max Power Dissipation	595W
Current Rating	105A
Number of Elements	1
Element Configuration	Single
Power Dissipation	595W
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	72 ns
Transistor Application	MOTOR CONTROL
Rise Time	32ns
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	366 ns
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	105A
Reverse Recovery Time	180 ns
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	2.5V
Turn On Time	104 ns
Test Condition	600V, 15A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.75V @ 15V, 60A
Max Junction Temperature (Tj)	150°C
Continuous Collector Current	105A
Turn Off Time-Nom (toff)	411 ns
IGBT Type	NPT
Gate Charge	340nC
Current - Collector Pulsed (Icm)	240A
Switching Energy	3.21mJ (on), 4.78mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Fall Time-Max (tf)	58ns
Height	25.05mm
Length	16.1mm
Width	5.5mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free