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STGW40N120KD

STGW40N120KD

STGW40N120KD

STMicroelectronics

STGW40N120KD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

SOT-23

STGW40N120KD Datasheet

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Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.500007g
Transistor Element Material SILICON
Operating Temperature -55°C~125°C TJ
Packaging Tube
Series PowerMESH™
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 240W
Base Part Number STGW40
Pin Count 3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 48 ns
Power - Max 240W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 420 ns
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 80A
Reverse Recovery Time 84 ns
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.8V
Turn On Time 83 ns
Test Condition 960V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.85V @ 15V, 30A
Turn Off Time-Nom (toff) 564 ns
Gate Charge 126nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 48ns/338ns
Switching Energy 3.7mJ (on), 5.7mJ (off)
Gate-Emitter Voltage-Max 25V
Gate-Emitter Thr Voltage-Max 6.5V
Height 21.07mm
Length 16.02mm
Width 5.15mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.926317 $1.926317
10 $1.817280 $18.1728
100 $1.714415 $171.4415
500 $1.617373 $808.6865
1000 $1.525823 $1525.823
STGW40N120KD Product Details

STGW40N120KD Description


The STGW40N120KD high voltage and short-circuit rugged IGBT utilizes the advanced PowerMESH? process resulting in an excellent trade-off between switching performance and low ON-state behavior.



STGW40N120KD Features


  • Low on-losses

  • High current capability

  • Low gate charge

  • Short circuit withstand time 10 μs

  • IGBT co-packaged with Ultrafast free-wheeling diode

  • ROHS3 Compliant

  • No SVHC

  • Lead Free



STGW40N120KD Applications


  • Motor control

  • New Energy Vehicle

  • Photovoltaic Generation

  • Wind Power Generation

  • Smart Grid


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