APT30N60BC6

new-10%

Manufacturer part number:APT30N60BC6

Manufacturer:Microsemi Corporation

Description:MOSFET N-CH 600V 30A TO-247

Case Package:SOT-23

Datasheet:APT30N60BC6 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	22 Weeks
Lifecycle Status	IN PRODUCTION (Last Updated: 2 days ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	1997
Series	CoolMOS™
JESD-609 Code	e1
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	TIN SILVER COPPER
Additional Feature	AVALANCHE RATED, ULTRA-LOW RESISTANCE
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	219W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	219W
Case Connection	DRAIN
Turn On Delay Time	9 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	125m Ω @ 14.5A, 10V
Vgs(th) (Max) @ Id	3.5V @ 960μA
Input Capacitance (Ciss) (Max) @ Vds	2267pF @ 25V
Current - Continuous Drain (Id) @ 25°C	30A Tc
Gate Charge (Qg) (Max) @ Vgs	88nC @ 10V
Rise Time	17ns
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	48 ns
Turn-Off Delay Time	74 ns
Continuous Drain Current (ID)	30A
Gate to Source Voltage (Vgs)	20V
Pulsed Drain Current-Max (IDM)	89A
DS Breakdown Voltage-Min	600V
Avalanche Energy Rating (Eas)	636 mJ
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free