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AOT8N80L

AOT8N80L

AOT8N80L

Alpha & Omega Semiconductor Inc.

N-Channel Tube 1.63 Ω @ 4A, 10V ±30V 1650pF @ 25V 32nC @ 10V 800V TO-220-3

SOT-23

AOT8N80L Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2010
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 245W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.63 Ω @ 4A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1650pF @ 25V
Current - Continuous Drain (Id) @ 25°C 7.4A Tc
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 7.4A
JEDEC-95 Code TO-220AB
Pulsed Drain Current-Max (IDM) 26A
DS Breakdown Voltage-Min 800V
Avalanche Energy Rating (Eas) 433 mJ
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $6.659760 $6.65976
10 $6.282792 $62.82792
100 $5.927163 $592.7163
500 $5.591663 $2795.8315
1000 $5.275154 $5275.154
AOT8N80L Product Details

AOT8N80L Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 433 mJ.A device's maximal input capacitance is 1650pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 7.4A, which represents the maximum continuous current it can conduct.In terms of pulsed drain current, it has a maximum of 26A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 800V.This transistor requires a 800V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

AOT8N80L Features


the avalanche energy rating (Eas) is 433 mJ
a continuous drain current (ID) of 7.4A
based on its rated peak drain current 26A.
a 800V drain to source voltage (Vdss)


AOT8N80L Applications


There are a lot of Alpha & Omega Semiconductor Inc.
AOT8N80L applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples

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