SPP11N80C3XKSA1

new-10%

Manufacturer part number:SPP11N80C3XKSA1

Manufacturer:Infineon Technologies

Description:MOSFET (Metal Oxide) N-Channel Tube 450m Ω @ 7.1A, 10V ±20V 1600pF @ 100V 85nC @ 10V 800V TO-220-3

Case Package:SOT-23

Datasheet:SPP11N80C3XKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mounting Type	Through Hole
Package / Case	TO-220-3
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	CoolMOS™
Published	2005
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	156W Tc
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	450m Ω @ 7.1A, 10V
Vgs(th) (Max) @ Id	3.9V @ 680μA
Input Capacitance (Ciss) (Max) @ Vds	1600pF @ 100V
Current - Continuous Drain (Id) @ 25°C	11A Tc
Gate Charge (Qg) (Max) @ Vgs	85nC @ 10V
Drain to Source Voltage (Vdss)	800V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
JEDEC-95 Code	TO-220AB
Drain Current-Max (Abs) (ID)	11A
Drain-source On Resistance-Max	0.45Ohm
Pulsed Drain Current-Max (IDM)	33A
DS Breakdown Voltage-Min	800V
Avalanche Energy Rating (Eas)	470 mJ
RoHS Status	ROHS3 Compliant