Name	Value
Type	Parameter
Factory Lead Time	33 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3 Variant
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	1999
Series	POWER MOS 7®
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	1.2kV
Max Power Dissipation	543W
Current Rating	96A
Pin Count	3
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	96A
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Turn On Time	36 ns
Test Condition	600V, 35A, 4.3 Ω, 15V
Vce(on) (Max) @ Vge, Ic	3.9V @ 15V, 35A
Turn Off Time-Nom (toff)	220 ns
IGBT Type	PT
Gate Charge	150nC
Current - Collector Pulsed (Icm)	140A
Td (on/off) @ 25°C	16ns/95ns
Switching Energy	750μJ (on), 680μJ (off)
Gate-Emitter Thr Voltage-Max	6V
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free

Quantity	Unit Price	Ext. Price
30	$18.24833	$547.4499

APT35GP120B2DQ2G

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