IRG7PH30K10DPBF

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Manufacturer part number:IRG7PH30K10DPBF

Manufacturer:Infineon Technologies

Description:IRG7PH30K10DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRG7PH30K10DPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2009
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	MATTE TIN OVER NICKEL
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	180W
Peak Reflow Temperature (Cel)	250
[email protected] Reflow Temperature-Max (s)	30
Number of Elements	1
Rise Time-Max	41ns
Element Configuration	Single
Power Dissipation	180W
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	23 ns
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	130 ns
Collector Emitter Voltage (VCEO)	2.35V
Max Collector Current	30A
Reverse Recovery Time	140ns
JEDEC-95 Code	TO-247AC
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	2.35V
Turn On Time	34 ns
Test Condition	600V, 9A, 22 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.35V @ 15V, 9A
Turn Off Time-Nom (toff)	390 ns
IGBT Type	Trench
Gate Charge	45nC
Current - Collector Pulsed (Icm)	27A
Td (on/off) @ 25°C	14ns/110ns
Switching Energy	530μJ (on), 380μJ (off)
Gate-Emitter Thr Voltage-Max	7.5V
Fall Time-Max (tf)	56ns
Height	20.7mm
Length	15.87mm
Width	5.3086mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free