APT40GR120S

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Manufacturer part number:APT40GR120S

Manufacturer:Microsemi Corporation

Description:APT40GR120 Series 1200 V 88 A 210nC 500 W NPT Type IGBT - D3PAK

Case Package:SOT-23

Datasheet:APT40GR120S Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	19 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2001
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	500W
Input Type	Standard
Power - Max	500W
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	3.2V
Max Collector Current	88A
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Test Condition	600V, 40A, 4.3 Ω, 15V
Vce(on) (Max) @ Vge, Ic	3.2V @ 15V, 40A
IGBT Type	NPT
Gate Charge	210nC
Current - Collector Pulsed (Icm)	160A
Td (on/off) @ 25°C	22ns/163ns
Switching Energy	1.38mJ (on), 906μJ (off)
Gate-Emitter Voltage-Max	30V
Gate-Emitter Thr Voltage-Max	6V
RoHS Status	RoHS Compliant
Lead Free	Lead Free