STGW60H65DRF  Description

This device is an IGBT developed using an

advanced proprietary trench gate and field stop

structure. This IGBT is the result of a compromise

between conduction and switching losses,

maximizing the efficiency of high switching

frequency converters. Furthermore, a slightly

positive VCE(sat) temperature coefficient and very

tight parameter distribution result in easier

paralleling operation.

STGW60H65DRF  Features

Very high speed switching

Tight parameters distribution

Safe paralleling

Low thermal resistance

6 μs short-circuit withstand time

Ultrafast soft recovery antiparallel diode

STGW60H65DRF  Applications

Photovoltaic inverters

Uninterruptible power supply

Welding

Power factor correction

High switching frequency converters