STGWA75M65DF2 Description

STGWA75M65DF2 is a 650v Trench gate field-stop IGBT. The STGWA75M65DF2 is an IGBT developed using an advanced proprietary trench gate field-stop structure. The STGWA75M65DF2 is a part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VcE(sat) temperature coefficient and tight parameter distribution result in a safer paralleling operation.

STGWA75M65DF2 Features

6 μs of short-circuit withstand time

VcE(sat)= 1.65 V (typ.) @ |c= 75 A

Tight parameter distribution

Safer paralleling

Low thermal resistance

Soft and very fast recovery antiparallel diode

STGWA75M65DF2 Applications

Motor control

UPS

PFC

Automotive 

Body electronics & lighting 

Industrial 

Power delivery