APTGL475U120DAG

new-10%

Manufacturer part number:APTGL475U120DAG

Manufacturer:Microsemi Corporation

Description:IGBT MODULE 1200V 610A 2307W SP6

Case Package:SOT-23

Datasheet:APTGL475U120DAG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	36 Weeks
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SP6
Number of Pins	5
Operating Temperature	-40°C~175°C TJ
Published	1999
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	2.307kW
Number of Elements	1
Configuration	Single
Power - Max	2307W
Input	Standard
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	610A
Current - Collector Cutoff (Max)	4mA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Input Capacitance	24.6nF
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 400A
IGBT Type	Trench Field Stop
NTC Thermistor	No
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	24.6nF @ 25V
VCEsat-Max	2.2 V
RoHS Status	RoHS Compliant