APT45GR65B2DU30

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Manufacturer part number:APT45GR65B2DU30

Manufacturer:Microsemi Corporation

Description:INSULATED GATE BIPOLAR TRANSISTO

Case Package:SOT-23

Datasheet:APT45GR65B2DU30 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	22 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Published	2001
JESD-609 Code	e1
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	TIN SILVER COPPER
Max Power Dissipation	543W
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Input Type	Standard
Power - Max	543W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.4V
Max Collector Current	118A
Reverse Recovery Time	80 ns
JEDEC-95 Code	TO-247AD
Collector Emitter Breakdown Voltage	650V
Turn On Time	47 ns
Test Condition	433V, 45A, 4.3 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 45A
Turn Off Time-Nom (toff)	175 ns
IGBT Type	NPT
Gate Charge	203nC
Current - Collector Pulsed (Icm)	224A
Td (on/off) @ 25°C	15ns/100ns
RoHS Status	RoHS Compliant