APT50M65B2LLG

new-10%

Manufacturer part number:APT50M65B2LLG

Manufacturer:Microsemi Corporation

Description:MOSFET N-CH 500V 67A T-MAX

Case Package:SOT-23

Datasheet:APT50M65B2LLG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3 Variant
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	1997
Series	POWER MOS 7®
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	TIN SILVER COPPER
Voltage - Rated DC	500V
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Current Rating	67A
Pin Count	3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	694W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	694W
Case Connection	DRAIN
Turn On Delay Time	12 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	65m Ω @ 33.5A, 10V
Vgs(th) (Max) @ Id	5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds	7010pF @ 25V
Current - Continuous Drain (Id) @ 25°C	67A Tc
Gate Charge (Qg) (Max) @ Vgs	141nC @ 10V
Rise Time	28ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	30 ns
Turn-Off Delay Time	29 ns
Continuous Drain Current (ID)	67A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.065Ohm
Pulsed Drain Current-Max (IDM)	268A
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free