SQ1440EH-T1_GE3

new-10%

Manufacturer part number:SQ1440EH-T1_GE3

Manufacturer:Vishay Siliconix

Description:MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 120m Ω @ 3.8A, 10V ±20V 344pF @ 15V 5.5nC @ 10V 60V 6-TSSOP, SC-88, SOT-363

Case Package:SOT-23

Datasheet:SQ1440EH-T1_GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	Automotive, AEC-Q101, TrenchFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PDSO-G6
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	3.3W Tc
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	120m Ω @ 3.8A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	344pF @ 15V
Current - Continuous Drain (Id) @ 25°C	1.7A Tc
Gate Charge (Qg) (Max) @ Vgs	5.5nC @ 10V
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	1.7A
Drain-source On Resistance-Max	0.12Ohm
DS Breakdown Voltage-Min	60V
Feedback Cap-Max (Crss)	17 pF
RoHS Status	ROHS3 Compliant