APT60N60SCSG

new-10%

Manufacturer part number:APT60N60SCSG

Manufacturer:Microsemi Corporation

Description:Trans MOSFET N-CH 600V 60A 3-Pin(2+Tab) D3PAK

Case Package:SOT-23

Datasheet:APT60N60SCSG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	25 Weeks
Lifecycle Status	IN PRODUCTION (Last Updated: 3 weeks ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Published	1997
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Pure Matte Tin (Sn)
Additional Feature	AVALANCHE ENERGY RATED
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	245
[email protected] Reflow Temperature-Max (s)	30
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	431W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	431W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	45m Ω @ 44A, 10V
Vgs(th) (Max) @ Id	3.9V @ 3mA
Input Capacitance (Ciss) (Max) @ Vds	7200pF @ 25V
Current - Continuous Drain (Id) @ 25°C	60A Tc
Gate Charge (Qg) (Max) @ Vgs	190nC @ 10V
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Continuous Drain Current (ID)	60A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.045Ohm
DS Breakdown Voltage-Min	600V
FET Feature	Super Junction
RoHS Status	RoHS Compliant