APT8018JN

new-10%

Manufacturer part number:APT8018JN

Manufacturer:Microsemi Corporation

Description:MOSFET N-CH 800V 40A ISOTOP

Case Package:SOT-23

Datasheet:APT8018JN Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tray
Series	POWER MOS IV®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
Additional Feature	UL RECOGNIZED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PUFM-X4
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	690W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	180m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	4V @ 5mA
Input Capacitance (Ciss) (Max) @ Vds	14000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	40A Tc
Gate Charge (Qg) (Max) @ Vgs	700nC @ 10V
Drain to Source Voltage (Vdss)	800V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Drain Current-Max (Abs) (ID)	40A
Drain-source On Resistance-Max	0.18Ohm
Pulsed Drain Current-Max (IDM)	160A
DS Breakdown Voltage-Min	800V
Feedback Cap-Max (Crss)	690 pF
Turn Off Time-Max (toff)	130ns
Turn On Time-Max (ton)	80ns
RoHS Status	RoHS Compliant