APT80F60J

new-10%

Manufacturer part number:APT80F60J

Manufacturer:Microsemi Corporation

Description:MOSFET N-CH 600V 84A SOT-227

Case Package:SOT-23

Datasheet:APT80F60J Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Lifecycle Status	IN PRODUCTION (Last Updated: 1 month ago)
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	1997
Series	POWER MOS 8™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
Additional Feature	AVALANCHE RATED, UL RECOGNIZED
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Pin Count	4
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	961W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	ISOLATED
Turn On Delay Time	134 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	55m Ω @ 60A, 10V
Vgs(th) (Max) @ Id	5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds	23994pF @ 25V
Current - Continuous Drain (Id) @ 25°C	84A Tc
Gate Charge (Qg) (Max) @ Vgs	598nC @ 10V
Rise Time	156ns
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	123 ns
Turn-Off Delay Time	408 ns
Continuous Drain Current (ID)	84A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.055Ohm
DS Breakdown Voltage-Min	600V
Avalanche Energy Rating (Eas)	3352 mJ
Radiation Hardening	No
RoHS Status	RoHS Compliant