FDFME3N311ZT

new-10%

Manufacturer part number:FDFME3N311ZT

Manufacturer:ON Semiconductor

Description:MOSFET Int. NCh PowerTrench MOSFET & Sch. Diode

Case Package:SOT-23

Datasheet:FDFME3N311ZT Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 1 week ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-UFDFN Exposed Pad
Number of Pins	6
Weight	25.2mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	PowerTrench®
JESD-609 Code	e4
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Number of Elements	1
Power Dissipation-Max	1.4W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.1W
Case Connection	DRAIN
Turn On Delay Time	6 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	299m Ω @ 1.6A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	75pF @ 15V
Current - Continuous Drain (Id) @ 25°C	1.8A Ta
Gate Charge (Qg) (Max) @ Vgs	1.4nC @ 4.5V
Rise Time	16ns
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	2.8 ns
Turn-Off Delay Time	22 ns
Continuous Drain Current (ID)	1.6A
Threshold Voltage	1V
Gate to Source Voltage (Vgs)	12V
Drain-source On Resistance-Max	0.299Ohm
Drain to Source Breakdown Voltage	30V
FET Feature	Schottky Diode (Isolated)
Nominal Vgs	1 V
Height	550μm
Length	1.6mm
Width	1.6mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant