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BSZ086P03NS3EGATMA1

BSZ086P03NS3EGATMA1

BSZ086P03NS3EGATMA1

Infineon Technologies

BSZ086P03NS3EGATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

BSZ086P03NS3EGATMA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature ESD PROTECTED
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code S-PDSO-N5
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 2.1W Ta 69W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 69W
Case Connection DRAIN
Turn On Delay Time 16 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.6m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 3.1V @ 105μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 4785pF @ 15V
Current - Continuous Drain (Id) @ 25°C 13.5A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs 57.5nC @ 10V
Rise Time 46ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±25V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 13.5A
Threshold Voltage -2.5V
Gate to Source Voltage (Vgs) 25V
Max Dual Supply Voltage -30V
Drain to Source Breakdown Voltage -30V
Height 1.1mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $4.345930 $4.34593
10 $4.099934 $40.99934
100 $3.867862 $386.7862
500 $3.648927 $1824.4635
1000 $3.442384 $3442.384
BSZ086P03NS3EGATMA1 Product Details

BSZ086P03NS3EGATMA1 Description

P-channel power MOSFETs are part of Infineon's extremely unique OptiMOSTM family. In essential parameters for power system design, such as on-state resistance and figure of merit characteristics, BSZ086P03NS3EGATMA1 constantly meets the highest quality and performance expectations.


BSZ086P03NS3EGATMA1 Features

  • single P-Channel in S3O8

  • Qualified according to JEDEC1) for target applications

  • 150 °C operating temperature

  • V GS=25 V, especially suited for notebook applications

  • Pb-free; RoHS compliant

  • ESD protected

  • Halogen-free according to IEC61249-2-21

  • Enhancement mode

  • Normal level, logic level, or super logic level

  • Avalanche rated

  • Pb-free lead plating; RoHS compliant 


BSZ086P03NS3EGATMA1 Applications

  • battery management

  • load switching

  • Consumer

  • DC-DC

  • eMobility

  • Motor control

  • Notebook

  • Onboard charger


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