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APT97N65LC6

APT97N65LC6

APT97N65LC6

Microsemi Corporation

Trans MOSFET N-CH 650V 97A 3-Pin(3+Tab) TO-264

SOT-23

APT97N65LC6 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 22 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1997
Series CoolMOS™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature AVALANCHE RATED, ULTRA-LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 862W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 25 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 41m Ω @ 48.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 2.96mA
Input Capacitance (Ciss) (Max) @ Vds 7650pF @ 25V
Current - Continuous Drain (Id) @ 25°C 97A Tc
Gate Charge (Qg) (Max) @ Vgs 300nC @ 10V
Rise Time 60ns
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 130 ns
Turn-Off Delay Time 275 ns
Continuous Drain Current (ID) 97A
Gate to Source Voltage (Vgs) 20V
DS Breakdown Voltage-Min 650V
Radiation Hardening No
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
30 $15.94500 $478.35

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