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APT25SM120S

APT25SM120S

APT25SM120S

Microsemi Corporation

POWER MOSFET - SIC

SOT-23

APT25SM120S Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 22 Weeks
Mounting Type Chassis Mount
Package / Case D-3 Module
Surface Mount YES
Operating Temperature -55°C~175°C TJ
Packaging Bulk
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology SiCFET (Silicon Carbide)
Configuration Single
Power Dissipation-Max 175W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 175m Ω @ 10A, 20V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Current - Continuous Drain (Id) @ 25°C 25A Tc
Gate Charge (Qg) (Max) @ Vgs 72nC @ 20V
Drain to Source Voltage (Vdss) 1200V
Continuous Drain Current (ID) 25A
RoHS Status RoHS Compliant

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