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APTM20SKM10TG

APTM20SKM10TG

APTM20SKM10TG

Microsemi Corporation

Trans MOSFET N-CH 200V 175A 20-Pin Case SP-4

SOT-23

APTM20SKM10TG Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP4
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Bulk
Published 2016
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 12
ECCN Code EAR99
Terminal Finish MATTE TIN
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 12
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE AND THERMISTOR
Power Dissipation-Max 694W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 694W
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 12m Ω @ 87.5A, 10V
Vgs(th) (Max) @ Id 5V @ 5mA
Input Capacitance (Ciss) (Max) @ Vds 13700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 175A Tc
Gate Charge (Qg) (Max) @ Vgs 224nC @ 10V
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 175A
Gate to Source Voltage (Vgs) 30V
Pulsed Drain Current-Max (IDM) 700A
DS Breakdown Voltage-Min 200V
Avalanche Energy Rating (Eas) 2500 mJ
RoHS Status RoHS Compliant

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