APTGF200U120DG

new-10%

Manufacturer part number:APTGF200U120DG

Manufacturer:Microsemi Corporation

Description:IGBT MODULE 1200V 275A 1136W SP6

Case Package:SOT-23

Datasheet:APTGF200U120DG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SP6
Number of Pins	5
Published	1999
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	TIN SILVER COPPER
Max Operating Temperature	150°C
Min Operating Temperature	-40°C
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	1.136kW
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Pin Count	5
Number of Elements	1
Configuration	Single
Case Connection	ISOLATED
Power - Max	1136W
Transistor Application	GENERAL PURPOSE SWITCHING
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	275A
Current - Collector Cutoff (Max)	500μA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Input Capacitance	13.8nF
Turn On Time	100 ns
Vce(on) (Max) @ Vge, Ic	3.7V @ 15V, 200A
Turn Off Time-Nom (toff)	400 ns
IGBT Type	NPT
NTC Thermistor	No
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	13.8nF @ 25V
VCEsat-Max	3.7 V
RoHS Status	RoHS Compliant