APTGF350A60G datasheet pdf and Transistors - IGBTs - Modules product details from Microsemi Corporation stock available on our website
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APTGF350A60G Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Chassis Mount, Screw
Mounting Type
Chassis Mount
Package / Case
SP6
Number of Pins
7
Published
2012
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
7
ECCN Code
EAR99
Terminal Finish
TIN SILVER COPPER
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
1.562kW
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Pin Count
7
Number of Elements
2
Configuration
Half Bridge
Element Configuration
Dual
Case Connection
ISOLATED
Power - Max
1562W
Transistor Application
MOTOR CONTROL
Polarity/Channel Type
N-CHANNEL
Input
Standard
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
430A
Current - Collector Cutoff (Max)
200μA
Collector Emitter Breakdown Voltage
600V
Input Capacitance
17.2nF
Turn On Time
51 ns
Vce(on) (Max) @ Vge, Ic
2.5V @ 15V, 360A
Turn Off Time-Nom (toff)
210 ns
IGBT Type
NPT
NTC Thermistor
No
Gate-Emitter Voltage-Max
20V
Input Capacitance (Cies) @ Vce
17.2nF @ 25V
VCEsat-Max
2.5 V
RoHS Status
RoHS Compliant
Lead Free
Lead Free
APTGF350A60G Product Details
APTGF350A60G Description
An IGBT is a is power semiconductor die and is the short form of insulated-gate bipolar transistor. An IGBT power module is the assembly and physical packaging of several IGBT power semiconductor dies in one package.