APTGF50H60T2G

new-10%

Manufacturer part number:APTGF50H60T2G

Manufacturer:Microsemi Corporation

Description:POWER MOD IGBT NPT FULL BRDG SP2

Case Package:SOT-23

Datasheet:APTGF50H60T2G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SP3
Number of Pins	22
Published	2012
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Max Operating Temperature	150°C
Min Operating Temperature	-40°C
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	250W
Number of Elements	1
Configuration	Full Bridge Inverter
Input	Standard
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	65A
Current - Collector Cutoff (Max)	250μA
Collector Emitter Breakdown Voltage	600V
Input Capacitance	2.2nF
Vce(on) (Max) @ Vge, Ic	2.45V @ 15V, 50A
IGBT Type	NPT
NTC Thermistor	Yes
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	2.2nF @ 25V
VCEsat-Max	2.45 V
Radiation Hardening	No
RoHS Status	RoHS Compliant