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APTGF90TDU60PG

APTGF90TDU60PG

APTGF90TDU60PG

Microsemi Corporation

Trans IGBT Module N-CH 600V 110A 21-Pin Case SP-6P

SOT-23

APTGF90TDU60PG Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case SP6
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Published 2006
JESD-609 Code e1
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 21
Terminal Finish TIN SILVER COPPER
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 416W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 21
JESD-30 Code R-XUFM-X21
Number of Elements 6
Configuration Triple, Dual - Common Source
Case Connection ISOLATED
Power - Max 416W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 2.5V
Max Collector Current 110A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 600V
Input Capacitance 4.3nF
Turn On Time 51 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 90A
Turn Off Time-Nom (toff) 210 ns
IGBT Type NPT
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 4.3nF @ 25V
RoHS Status RoHS Compliant

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