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APTGL180A1202G

APTGL180A1202G

APTGL180A1202G

Microsemi Corporation

IGBT MODULE 1200V 220A 750W SP2

SOT-23

APTGL180A1202G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 22 Weeks
Lifecycle Status OBSOLETE (Last Updated: 3 weeks ago)
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP2
Number of Pins 18
Operating Temperature -40°C~175°C TJ
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 750W
Number of Elements 1
Configuration Half Bridge
Element Configuration Dual
Power - Max 750W
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 220A
Current - Collector Cutoff (Max) 300μA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 9.3nF
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 150A
IGBT Type Trench Field Stop
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 9.3nF @ 25V
VCEsat-Max 2.2 V
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $92.80000 $92.8

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